High brightness quantum dots

Quantum dot (QD) based photonic materials are currently receiving a large amount of attention due to the interesting blend of atomic and solid state properties that they possess. By fabricating semiconductor lasers (SLs) from such materials, researchers have demonstated devices that exhibit temperature insensitive, low threshold currents, high modulation bandwidths and a low sensitivitiy to optical feedback. In addition, semiconductor optical amplifiers (SOAs) from such materials are expected to provide new opportunities for ultrafast data processing, while monolithic mode locked lasers made from QD materials have demonstrated enhanced jitter performance. QD SLs have also demonstrated improved beam quality over their quantum well (QW) counterparts, exhibiting reduced filamentation and superior M2 values up to 45mW in output power.

The general improvement in QD SLs when compared to QW devices is due to their unique carrier dynamics which results in a reduced phase-amplitude coupling (alpha-parameter) and increased relaxation oscillation damping, both factors contributing to a non-linear system less sensitive to internal/external perturbations. The aim of this topic is to investigate how QD materials can improve the stability of spatially extended laser devices towards providing coherent emission in the multi-Watt range.

For links to recent publications on this topic please follow the links on the researcher pages.